Gallium Nitride-enabled High Frequency and High Efficiency Power Conversion [electronic resource] /
Contributor(s): Meneghesso, Gaudenzio [editor.] | Meneghini, Matteo [editor.] | Zanoni, Enrico [editor.] | SpringerLink (Online service).
Series: Integrated Circuits and Systems: Publisher: Cham : Springer International Publishing : Imprint: Springer, 2018Edition: 1st ed. 2018.Description: XIII, 232 p. 183 illus., 165 illus. in color. | Binding - Card Paper |.Content type: text Media type: computer Carrier type: online resourceISBN: 9783319779942.Subject(s): Electrical Engineering
| Circuits and Systems | Electronic Circuits and Devices | Optical and Electronic MaterialsDDC classification: 621.3815 Online resources: Click here to access eBook in Springer Nature platform. (Within Campus only.)
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Springer Nature eBookSummary: This book demonstrates to readers why Gallium Nitride (GaN) transistors have a superior performance as compared to the already mature Silicon technology. The new GaN-based transistors here described enable both high frequency and high efficiency power conversion, leading to smaller and more efficient power systems. Coverage includes i) GaN substrates and device physics; ii) innovative GaN -transistors structure (lateral and vertical); iii) reliability and robustness of GaN-power transistors; iv) impact of parasitic on GaN based power conversion, v) new power converter architectures and vi) GaN in switched mode power conversion. Provides single-source reference to Gallium Nitride (GaN)-based technologies, from the material level to circuit level, both for power conversions architectures and switched mode power amplifiers; Demonstrates how GaN is a superior technology for switching devices, enabling both high frequency, high efficiency and lower cost power conversion; Enables design of smaller, cheaper and more efficient power supplies.
This book demonstrates to readers why Gallium Nitride (GaN) transistors have a superior performance as compared to the already mature Silicon technology. The new GaN-based transistors here described enable both high frequency and high efficiency power conversion, leading to smaller and more efficient power systems. Coverage includes i) GaN substrates and device physics; ii) innovative GaN -transistors structure (lateral and vertical); iii) reliability and robustness of GaN-power transistors; iv) impact of parasitic on GaN based power conversion, v) new power converter architectures and vi) GaN in switched mode power conversion. Provides single-source reference to Gallium Nitride (GaN)-based technologies, from the material level to circuit level, both for power conversions architectures and switched mode power amplifiers; Demonstrates how GaN is a superior technology for switching devices, enabling both high frequency, high efficiency and lower cost power conversion; Enables design of smaller, cheaper and more efficient power supplies.
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